PART |
Description |
Maker |
2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS From old datasheet system FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
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Toshiba Corporation Toshiba Semiconductor
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MIG20J806HA MIG20J806H EE08617 |
Silicon N-channel integrated IGBT module for high power switching, motor control applications N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) N通道IGBT的(大功率开关,马达控制应用
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TOSHIBA[Toshiba Semiconductor] Toshiba, Corp.
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MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
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TOSHIBA
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2SJ549 2SJ549L 2SJ549S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
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HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
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2SJ550 2SJ550L 2SJ550S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
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HITACHI[Hitachi Semiconductor] http://
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GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
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http:// TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
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2SB1202L-X-T6C-K 2SB1202L-X-TM3-T 2SB1202L-R-TN3-K |
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-252 HIGH CURRENT SWITCHING APPLICATION 大电流开关应 HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126 HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-251
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UTC[Unisonic Technologies] 友顺科技股份有限公司 Unisonic Technologies Co., Ltd. UNISONIC TECHNOLOGIES CO LTD ??『绉???′唤??????
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MP4403 E002514 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
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Toshiba
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MG75Q1JS40 E002405 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的(不适用沟道绝缘栅双极型晶体管) N CHANNEL IGBT (HIGH POWER SWITCHING / CHOPPER APPLICATIONS) N CHANNEL IGBT (HIGH POWER SWITCHING CHOPPER APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)
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Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
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MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
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TOSHIBA
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QM75E3Y-H QM75E2Y-H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型 MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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